PART |
Description |
Maker |
MC68450 |
Direct Memory Access Controller
|
Motorola, Inc
|
HD68450 |
Direct Memory Access Controller(NMOS) 直接存储器存取控制器(NMOS管)
|
Hitachi,Ltd.
|
AN1102 |
ST10 DIRECT MEMORY ACCESS USING MAC - APP NOTE - REV A - 5/11/98
|
SGS Thomson Microelectronics
|
IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80 HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80 HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器(单存取RAM⑩) HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM Integrated Device Technology, Inc.
|
KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MCM6810 MCM6810CP MCM6810CS MCM6810P MCM6810S |
1 MHz; V(cc/in): -0.3 to 7.0V; 450ns; 128 x 8-bit randon-access memory 128 8-bit Random-Access Memory
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压,大电流达林顿阵列 Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压,大电流达林顿阵列 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
UM612 UM614 UM617 UM604 UM628 UM605 UM611 UM622 UM |
15 Watt DC-DC Converters Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:64-BGA; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
|
List of Unclassifed Man... List of Unclassifed Manufacturers N.A. Unisonic Technologies ETC[ETC] Electronic Theatre Controls, Inc.
|
SI3068 SI3068-B-FS |
FCC EMBEDDED DIRECT ACCESS ARRANGEMENT
|
Silicon Laboratories Inc.
|
SI3066-B-FS SI3066 |
V.32 FCC EMBEDDED DIRECT ACCESS ARRANGEMENT
|
SILABS[Silicon Laboratories]
|
SI3016-KS SI3016 SI3016-BS SI3016-F-FS |
3.3 V ENHANCED GLOBAL DIRECT ACCESS ARRANGEMENT
|
SILABS[Silicon Laboratories]
|
SI3024-KS |
FCC/JATE MC97 DAA (Direct Access Arrangement) digital interface
|
Silicon Laboratories
|